DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SIHFPC40 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
SIHFPC40
Vishay
Vishay Semiconductors Vishay
SIHFPC40 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Power MOSFET
IRFPC40, SiHFPC40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
600
RDS(on) (Ω)
VGS = 10 V
1.2
Qg (Max.) (nC)
60
Qgs (nC)
8.3
Qgd (nC)
30
Configuration
Single
D
TO-247AC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
TO-247AC
IRFPC40PbF
SiHFPC40-E3
IRFPC40
SiHFPC40
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 6.8 A (see fig. 12).
c. ISD 6.8 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case
LIMIT
600
± 20
6.8
4.3
27
1.2
410
150
3.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91240
S11-0443-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]