IRFD9110PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRFD9110PBF

Power MOSFET

Vishay Semiconductors 

TA, Ambient Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Ambient Temperature

IRFD9110, SiHFD9110

Vishay Siliconix

VDS

VGS

Rg

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Document Number: 91138

S10-2464-Rev. C, 25-Oct-10

www.vishay.com

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