IRF7413ZPBF Ver la hoja de datos (PDF) - International Rectifier
Nรบmero de pieza
componentes Descripciรณn
Fabricante
IRF7413ZPBF Datasheet PDF : 10 Pages
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IRF7413ZPbF
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
โฮVDSS/โTJ
RDS(on)
VGS(th)
โVGS(th)/โTJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
โโโ
โโโ
โโโ
1.35
โโโ
โโโ
โโโ
โโโ
โโโ
62
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
0.025
8.0
10.5
1.80
-5.0
โโโ
โโโ
โโโ
โโโ
โโโ
9.5
3.0
1.0
3.0
2.5
4.0
5.6
2.3
8.7
6.3
11
3.8
1210
270
140
โโโ
โโโ
10
13
2.25
โโโ
1.0
150
100
-100
โโโ
14
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
4.5
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
V VGS = 0V, ID = 250ยตA
V/ยฐC
mโฆ
Reference to 25ยฐC, ID = 1mA
e VGS = 10V, ID = 13A
e VGS = 4.5V, ID = 10A
V VDS = VGS, ID = 250ยตA
mV/ยฐC
ยตA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125ยฐC
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 10A
VDS = 15V
nC VGS = 4.5V
ID = 10A
See Fig. 16
nC VDS = 15V, VGS = 0V
โฆ
VDD = 16V, VGS = 4.5V
ID = 10A
ns Clamped Inductive Load
VGS = 0V
pF VDS = 15V
ฦ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
ย Avalanche Current
Typ.
โโโ
โโโ
Max.
32
10
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
โโโ โโโ 3.1
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
รย (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
โโโ โโโ 100
โโโ โโโ 1.0
โโโ 24 36
โโโ 16 24
integral reverse
p-n junction diode.
e V TJ = 25ยฐC, IS = 10A, VGS = 0V
ns TJ = 25ยฐC, IF = 10A, VDD = 15V
e nC di/dt = 100A/ยตs
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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