12N03L Ver la hoja de datos (PDF) - Infineon Technologies
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Fabricante
12N03L Datasheet PDF : 8 Pages
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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
IPD12N03L
IPU12N03L
Symbol
Values
Unit
min.
typ. max.
RthJC
RthJA
RthJA
-
1
1.5 K/W
-
-
100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=50µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=30A
Drain-source on-state resistance
VGS=10V, ID=30A
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RDS(on)
Values
Unit
min.
typ. max.
30
-
-V
1.2
1.6
2
µA
-
0.01
1
-
10
100
-
1
100 nA
-
11.5 14.7 mΩ
-
8.1
10.4
1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 79A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-01-17
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