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IPS05N03LA Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
IPS05N03LA
Infineon
Infineon Technologies Infineon
IPS05N03LA Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Parameter
Symbol Conditions
IPD05N03LA IPF05N03LA
IPS05N03LA IPU05N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=25 A, R G=2.7 Ω
-
tf
-
2413
921
112
10
7.8
31
4.8
3110 pF
1225
167
15 ns
12
38
6.0
Q gs
-
7.6
10 nC
Q g(th)
-
3.9
5.0
Q gd
V DD=15 V, I D=25 A,
-
5.2
7.8
Q sw
V GS=0 to 5 V
-
9.0
13
Qg
-
19
25
V plateau
-
3.2
-V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
17
22 nC
Q oss
V DD=15 V, V GS=0 V
-
20
27
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
50 A
-
-
350
-
0.91
1.2 V
-
-
10 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.7
page 3
2004-05-19

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