IPF050N03LG(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IPF050N03LG Datasheet PDF : 12 Pages
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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
IPD050N03L G
IPS050N03L G
IPF050N03L G
IPU050N03L G
Product Summary
V DS
R DS(on),max
ID
30 V
5 mΩ
50 A
Type
IPD050N03L G
IPF050N03L G
IPS050N03L G
IPU050N03L G
Package
Marking
PG-TO252-3-11
050N03L
PG-TO252-3-23
050N03L
PG-TO251-3-11
050N03L
PG-TO251-3-21
050N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 1.02
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
page 1
Value
50
50
50
50
350
50
60
6
±20
Unit
A
mJ
kV/µs
V
2008-04-15
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