HYM72V2005GS-60 Ver la hoja de datos (PDF) - Siemens AG

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componentes Descripción

Fabricante

HYM72V2005GS-60

2M × 72-Bit EDO-DRAM Module (ECC - Module)

Siemens AG 

HYM72V2005GS-50/-60

2M x 72-ECC Module

Parameter

Symbol

Average VCC supply current during RAS

ICC3

only refresh cycles:

-50 version

-60 version

Limit Values

min.

max.

–

1080

–

990

(RAS cycling, CAS = VIH , tRC = tRC min.)

Average VCC supply current during hyper ICC4

page mode (EDO):

-50 version

–

-60 version

–

–

(RAS = VIL, CAS, address cycling

tPC = tPC min.)

Standby VCC supply current

ICC5

–

(RAS = CAS = VCC – 0.2 V, one address

change within 15,6 µs trc)

Average VCC supply current during

ICC6

CAS-before-RAS refresh mode:

-50 version

–

-60 version

–

630

495

30

1080

990

(RAS, CAS cycling, tRC = tRC min.)

Unit Test

Condition

2) 4)

mA

mA

mA 2) 3) 4)

mA

mA –

mA 2) 4)

mA

Capacitance

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V; f = 1 MHz

Parameter

Input capacitance (A0 to A11,B0)

Input capacitance (RAS0, RAS2)

Input capacitance (CAS0, CAS4)

Input capacitance (WE0,WE2,OE0,OE2)

I/O capacitance (DQ0-DQ71)

Symbol

CI1

CI2

CI3

CI4

CIO1

Limit Values

min.

max.

–

10

–

50

–

15

–

15

–

15

Unit

pF

pF

pF

pF

pF

Semiconductor Group

6

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