Q67100-Q2056 Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

Q67100-Q2056

1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module)

Siemens AG 

HYM 321000S/GS-50/-60

1M × 32-Bit

Absolute Maximum Ratings

Operating temperature range ......................................................................................... 0 to + 70 °C

Storage temperature range...................................................................................... – 55 to + 125 °C

Input/output voltage ........................................................................... – 0.5 to min (Vcc + 0.5, 7.0) V

Power supply voltage...................................................................................................... – 1 to + 7 V

Power dissipation................................................................................................................... 2.52 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage to the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics 1)

TA = 0 to 70 °C; VCC = 5 V ± 10 %

Parameter

Symbol

Input high voltage

VIH

Input low voltage

VIL

Output high voltage (IOUT = – 5 mA)

VOH

Output low voltage (IOUT = 4.2 mA)

VOL

Input leakage current

II(L)

(0 V < VIN < 6.5 V, all other pins = 0 V)

Output leakage current

IO(L)

(DO is disabled, 0 V < VOUT < 5.5 V)

Average VCC supply current:

ICC1

HYM 321000S/GS-50

HYM 321000S/GS-60

(RAS, CAS, address cycling, tRC = tRC min.)

Standby VCC supply current

ICC2

(RAS = CAS = VIH)

Average VCC supply current during RAS

ICC3

only refresh cycles:

HYM 321000S/GS-50

HYM 321000S/GS-60

(RAS cycling, CAS = VIH , tRC = tRC min.)

Limit Values

min.

max.

2.4

5.5

– 1.0

0.8

2.4

–

–

0.4

– 10

10

– 10

10

–

400

–

360

–

–

4

–

400

–

360

–

Unit Test

Condition

V–

V–

V–

V–

µA –

µA –

mA

mA

2), 3),4)

mA –

2),4)

mA

mA

Semiconductor Group

5

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