HUFA76413DK8T Ver la hoja de datos (PDF) - Fairchild Semiconductor
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Fabricante
HUFA76413DK8T Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Device Marking
76413DK8
Device
HUFA76413DK8T
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
60
VDS = 50V
VGS = 0V
-
TA = 150oC
-
VGS = ±16V
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1
ID = 5.1A, VGS = 10V
-
rDS(ON)
Drain to Source On Resistance
ID = 4.8A, VGS = 5V
ID = 4.8A, VGS = 5V
TA = 150oC
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
VGS = 0V to 10V
VGS = 0V to 5V VDD = 30V
-
VGS = 0V to 1V ID = 4.8A
-
Ig = 1.0mA
-
-
Switching Characteristics (VGS = 5V)
tON
Turn-On Time
-
td(ON)
Turn-On Delay Time
-
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 30V, ID = 1A
-
VGS = 5V, RGS = 16Ω
-
tf
Fall Time
-
tOFF
Turn-Off Time
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = 4.8A
-
ISD = 2.4A
-
ISD = 4.8A, dISD/dt = 100A/µs -
ISD = 4.8A, dISD/dt = 100A/µs -
Notes:
1:
2:
3:
4:
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on FR-4 at 1
pad on FR-4
pad on FR-4
second.
at 1000
at 1000
seconds.
seconds.
Typ Max Units
-
-
V
-
1
µA
-
250
-
±100 nA
-
3
V
0.041 0.049
0.048 0.056
Ω
0.091 0.106
620
-
pF
180
-
pF
30
-
pF
18
23
nC
10
13
nC
0.6
0.8
nC
1.8
-
nC
5
-
nC
-
44
ns
10
-
ns
19
-
ns
45
-
ns
27
-
ns
-
108
ns
-
1.25
V
-
1.0
V
-
43
ns
-
55
nC
©2003 Fairchild Semiconductor Corporation
Rev. B
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