BC183C Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
BC183C Datasheet PDF : 3 Pages
| |||
BC183C
NPN General Purpose Amplifer
June 2007
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG , TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (Ta=25°C)
Storage Junction Temperature Range
Value
45
30
6
100
350
- 55 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
COB
fT
hfe
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current gain Bandwidth Product
Small Signal Current Gain
IC = 10μA
IC = 2mA
IE = 100μA
VCB = 30V
VEB = 4V
VCE = 5V, IC = 10μA
VCE = 5V, IC = 2.0mA
VCE = 5V, IC = 100mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 100mA, IB = 5mA
VCE = 5V, IC = 2mA
VCE = 10V, f = 1.0MHz
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2mA
f = 1KHz
45
30
6
40
120
80
0.55
150
450
NF
Noise Figure
VCE = 5V, IC = 200mA
RG = 2KΩ, f = 1KHz
Units
V
V
V
mA
mW
°C
Max
15
15
800
0.25
0.6
1.2
0.7
5
900
10
Units
V
V
V
nA
nA
V
V
V
pF
MHz
dB
©2007 Fairchild Semiconductor Corporation
1
BC183C Rev. A
www.fairchildsemi.com
Share Link: 