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HMJ1 Datasheet PDF : 3 Pages
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HMJ1
High Dynamic Range FET Mixer
The Communications Edge™
Product Information
Product Features
• +39 dBm IIP3
• No External Matching Elements
Required
• RF 750-1000 MHz
• LO 680-980 MHz
• IF 20-100 MHz
• +17 dBm Drive Level
• +3V Bias (23 mA)
• Low-Cost Surface Mount J-Lead
Package
Product Description
Functional Diagram
The HMJ1 is a high dynamic range, GaAs
FET mixer. This active FET realizes a typi-
cal third order intercept point of +39 dBm at
an LO drive level of +17 dBm. The HMJ1
comes in a low cost, J-lead package. Typical
applications include frequency up/down
conversion, modulation and demodulation for
receivers and transmitters used in cellular
communications systems.
Specifications
Parameter
Frequency Range:
RF
LO
IF
SSB Conversion Loss
Noise Figure
Isolation:
LO-RF
LO-IF
RF-IF
IIP3
Return Loss:
RF Port
LO Port
IF Port
Input P1dB
LO Drive Level
DC Current at +3V Bias
Units Minimum Typical Maximum
MHz
750
1000
MHz
680
980
MHz
20
100
dB
7.7
9.3
dB
9.2
dB
20
29
dB
30
40
dB
24
dBm
33
39
dB
dB
dB
dBm
dBm
mA
8
13
19
23
17
23
35
Condition
RF = 900 MHz (0dBm)
Test conditions unless otherwise stated: RF = 900 MHz (-10 dBm), LO = 830 MHz (17 dBm), IF = 70 MHz and 25°C.
Absolute Maximum Ratings
Ordering Information
Parameter
Rating
Operating Case Temperature
Storage Temperature
Maximum Input Power
-40 to +85°C
-55 to +125°C
25 dBm
1. Operation of this device above any of these parameters may cause permanent damage.
2. Total sum of LO port and RF port power should not exceed 25 dBm.
Part No.
HMJ1
HMJ1-PCB
Description
High Dynamic Range FET
(Available in tape and reel)z
Fully Assembled Application Circuit
Specifications and information are subject to change without notice.
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com
February 2004
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