HGTG40N60A4 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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HGTG40N60A4 Datasheet PDF : 8 Pages
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HGTG40N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
42
RG = 2.2Ω, L = 200µH, VCE = 390V
40
38 TJ = 25oC, TJ = 125oC, VGE = 15V
36
34
32
30
28
26
24
22
0
TJ = 25oC, TJ = 125oC, VGE = 15V
10
20
30
40
50
60
70
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120 RG = 2.2Ω, L = 200µH, VCE = 390V
100
TJ = 125oC, TJ = 25oC, VGE = 12V
80
60
40
20
0
TJ = 25oC, TJ = 125oC, VGE = 15V
0
10
20
30
40
50
60
70
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
190 RG = 2.2Ω, L = 200µH, VCE = 390V
180
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
VGE = 12V OR 15V, TJ = 25oC
140
130
0
10
20
30
40
50
60
70
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 2.2Ω, L = 200µH, VCE = 390V
65
60
TJ = 125oC, VGE = 12V OR 15V
55
50
45
40
TJ = 25oC, VGE = 12V OR 15V
35
30
0
10
20
30
40
50
60
70
80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
400
DUTY CYCLE < 0.5%, VCE = 10V
350 PULSE DURATION = 250µs
300
250
200
150
100
50
0
6
TJ = -55oC
TJ = 25oC
TJ = 125oC
7
8
9
10
11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2003 Fairchild Semiconductor Corporation
16 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12 VCE = 600V
10
VCE = 400V
8
6
VCE = 200V
4
2
0
0
50 100 150 200 250 300 350 400
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG40N60A4 Rev. B2
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