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HGTG40N60A4 Datasheet PDF : 8 Pages
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HGTG40N60A4
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG = 2.2Ω
L = 200µH
Test Circuit (Figure 20)
-
27
-
ns
-
20
-
ns
-
185
225
ns
-
55
95
ns
-
400
-
µJ
Turn-On Energy (Note 3)
EON2
-
1220 1400
µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
-
700
800
µJ
-
-
0.2
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves Unless Otherwise Specified
80
70
PACKAGE LIMITED
60
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225 TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2
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