DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HEF4013B(2015) Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
HEF4013B
(Rev.:2015)
NXP
NXP Semiconductors. NXP
HEF4013B Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Nexperia
HEF4013B
Dual D-type flip-flop
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).
Symbol Parameter
Conditions
Min
Max Unit
VDD
IIK
VI
IOK
II/O
IDD
Tstg
Tamb
Ptot
supply voltage
input clamping current
input voltage
output clamping current
input/output current
supply current
storage temperature
ambient temperature
total power dissipation
VI < 0.5 V or VI > VDD + 0.5 V
VO < 0.5 V or VO > VDD + 0.5 V
Tamb = 40 C to +125 C
SO14
[1]
0.5
-
0.5
-
-
-
65
40
-
+18 V
10
mA
VDD + 0.5 V
10
mA
10
mA
50
mA
+150 C
+125 C
500
mW
TSSOP14
[2]
-
500
mW
P
power dissipation
per output
-
100
mW
[1] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.
[2] For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K.
9. Recommended operating conditions
Table 5.
Symbol
VDD
VI
Tamb
t/V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature
input transition rise and fall rate
VDD = 5 V
VDD = 10 V
VDD = 15 V
Min
Max Unit
3
15 V
0
VDD V
40
+125 C
-
3.75 s/V
-
0.5 s/V
-
0.08 s/V
HEF4013B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 10 December 2015
© Nexperia B.V. 2017. All rights reserved
4 of 16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]