GS3018 Ver la hoja de datos (PDF) - GTM CORPORATION
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componentes Descripción
Fabricante
GS3018 Datasheet PDF : 4 Pages
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GS3018
N-CHANNEL MOSFET
Description
N-channel enhancement-mode MOSFET
Features
ԦLow on-resistance.
ԦFast switching speed.
ԦLow voltage drive (2.5V) makes this device ideal for portable equipment.
ԦEasily designed drive circuits.
ԦEasy to parallel.
Package Dimensions
Pb Free Plating Product
ISSUED DATE :2004/11/24
REVISED DATE :2005/12/02C
BVDSS
RDS(ON)
ID
30V
8
115mA
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25к
ID @TA=100к
IDM
PD @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.8
1.10
0
0.10
0.8
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Ratings
30
f20
115
75
800
0.225
0.0018
-40 ~ +150
Unit
V
V
mA
mA
mA
W
W/ć
ć
Ratings
556
Unit
ć/W
GS3018
Page: 1/4
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