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GF1A Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza
componentes Descripción
Fabricante
GF1A
Twtysemi
TY Semiconductor Twtysemi
GF1A Datasheet PDF : 1 Pages
1
Features
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
Product specification
GF1A - GF1M
Maximum Ratings And Electrical Characteristics at 25
Parameter
Maximum Recurrent Peak Reverse Voltage
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
VRRM 50 100 200 400 600 800 1000
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 100
Maximum Average Forward Rectified Current,at TL=75
I(AV)
1.0
A
Peak Forward Surge Current 8.3ms single half sine-wave
IFSM
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
VF
Maximum DC Reverse Current TA=25
IR
at Rated DC Blocking Voltage TA=125
30.0
1.0
5.0
50.0
A
1.2
V
A
Maximum Reverse Recovery Time(Note 1) TJ=25
TRR
2.0
s
Typical Junction Capacitance (Note 2)
CJ
12
pF
Maximum Thermal Resistance(Note 3) R JA
R JA
30
/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
Note 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and applied Vr = 4.0 V.
3. 8.0 mm2 ( .013mm thick ) land areas.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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