GBPC110-E4/51 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
GBPC110-E4/51 Datasheet PDF : 5 Pages
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GBPC1005, GBPC101, GBPC102, GBPC104, GBPC106, GBPC108, GBPC110
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
100
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TJ = 125 °C
10
1
1
0.1
0.01
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GBPC1
Hole For #6 Screw
0.158
0.142
(4.01)
(3.61)
DIA.
0.630 (16.00)
0.590 (14.98)
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
0.128 (3.25)
0.048 (1.22)
0.032
0.028
(0.81)
(0.71)
DIA.
AC
0.445 (11.30)
0.405 (10.29)
AC
0.094 (2.4) x 45°
0.040 (1.02) TYP.
0.750 (19.05)
MIN.
0.200 (5.08)
0.160 (4.06)
Polarity shown on side of case: Positive lead by beveled corner
Revision: 08-Jul-13
3
Document Number: 88611
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