FX50SMJ-03 Ver la hoja de datos (PDF) - Powerex
Número de pieza
componentes Descripción
Fabricante
FX50SMJ-03 Datasheet PDF : 4 Pages
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
Tc = 25°C
Pulse Test
–8
–6
–4
ID = –100A
–2
–50A
–25A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–100
Tc = 25°C
VDS = –10V
Pulse Test
–80
–60
–40
–20
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
104
7
5
Ciss
4
3
2
103
7
5
4
3
2 Tch = 25°C
f = 1MHZ
102 VGS =
–3 –5
0V
–7–100
–2 –3
Coss
Crss
–5 –7–101 –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
80
VGS = –4V
60
40
–10V
20
0
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
VDS = –10V
Pulse Test
5
4
75°C 125°C
3
TC = 25°C
2
101
7
5
4
3
2
100
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Tch = 25°C
7 VGS = –10V
5 VDD = –15V
4 RGEN = RGS = 50Ω
3
td(off)
2
102
tf
7
tr
5
4
3
td(on)
2
101
–5
–7
–100
–2 –3
–5 –7–101
–2 –3 –5
DRAIN CURRENT ID (A)
Jan.1999
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