FSQ110 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FSQ110 Datasheet PDF : 12 Pages
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
SenseFET Section(10)
Condition
Min. Typ. Max. Unit
IDSS
Zero-Gate-Voltage Drain Current
RDS(ON) Drain-Source On-State Resistance(11)
CISS
Input Capacitance
COSS Output Capacitance
CRSS Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Control Section
VDS = Max. Rating
VGS = 0V
VDS = 0.8 Max. Rating
VGS = 0V, TC = 125°C
VGS = 10V, ID = 0.5A
VGS = 0V, VDS = 25V,
f = 1MHz
VDS = 325V, ID = 1A
25
μA
200
14 19
Ω
162
18
pF
3.8
9.5
19
ns
33
42
fOSC
ΔfOSC
Switching Frequency
Switching Frequency Variation(10)
DMAX Maximum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
IFB
Feedback Source Current
tS/S
Internal Soft-Start Time(10)
Burst-Mode Section
92 100 108 KHz
-25°C ≤ TA ≤ 85°C
±5 ±10 %
Measured at 0.1 x VDS 55
60
65
%
VFB = GND
VFB = GND
11 12 13
V
7
8
9
VFB = GND
0.7 0.9 1.1 mA
VFB = 4V
10
ms
VBURH
VBURL Burst-Mode Voltage
VBUR(HYS)
Protection Section
TJ = 25°C
0.5 0.6 0.7
V
0.3 0.4 0.5
V
100 200 300 mV
ILIM
Peak Current Limit
tCLD
Current Limit Delay Time(10)
TSD
Thermal Shutdown Temperature(10)
VSD
Shutdown Feedback Voltage
VOVP Over-Voltage Protection
IDELAY
tLEB
Shutdown Delay Current
Leading-Edge Blanking Time(10)
Total Device Section
di/dt = 170mA/µs
VFB = 4V
0.60 0.70 0.80 A
600
ns
125 140
°C
5.5 6.0 6.5
V
18 19 20
V
3.5 5.0 6.5 μA
200
ns
IOP
Operating Supply Current (control part only) VCC = 14V
1
3
5
mA
ICH
Start-Up Charging Current
VCC = 0V
0.70 0.85 1.00 mA
VSTR
Vstr Supply Voltage
VCC = 0V
24
V
Notes:
10. These parameters, although guaranteed, are not 100% tested in production.
11. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.
12. The ESD level of an existing product can be applied to FSQ110 because it has same ESD protection circuit.
© 2007 Fairchild Semiconductor Corporation
FSQ110 Rev. 1.0.0
5
www.fairchildsemi.com
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