FSEZ1016AMY Ver la hoja de datos (PDF) - Fairchild Semiconductor

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FSEZ1016AMY

Primary-Side-Regulation PWM Integrated Power MOSFET

Fairchild Semiconductor 

Electrical Characteristics (Continued)

VDD=15V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified.

Symbol

Parameter

Conditions

Min. Typ. Max. Units

Voltage-Error-Amplifier Section

VVR

Reference Voltage

2.475 2.500 2.525 V

VN

Green-Mode Starting Voltage on COMV Pin fS=fOSC-2KHz, VVS=2.3V

2.8

V

VG

Green-Mode Ending Voltage on COMV Pin fS=1KHz

0.8

V

IV-SINK Output Sink Current

VVS=3V, VCOMV=2.5V

90

μA

IV-SOURCE Output Source Current

VVS=2V, VCOMV=2.5V

90

μA

VV-HGH Output High Voltage

VVS=2.3V

4.5

V

Internal MOSFET Section

DCYMAX Maximum Duty Cycle

75

%

BVDSS Drain-Source Breakdown Voltage

ID=250μA, VGS=0V

600

V

∆BVDSS /∆TJ

Breakdown Voltage Temperature Coefficient

ID=250μA, Referenced

to 25°C

0.6

V/°C

IS

Maximum Continuous Drain-Source Diode

Forward Current

1

A

ISM

Maximum Pulsed Drain-Source Diode

Forward Current

4

A

RDS(ON) Static Drain-Source On-Resistance

ID=0.5A, VGS=10V

9.3 11.5 Ω

IDSS

Drain-Source Leakage Current

VDS=600V, VGS=0V,

TC=25°C

VDS=480V, VGS=0V,

TC=100°C

1

μA

10 μA

tD-ON

tr

tD-OFF

tf

Turn-On Delay Time(3,4)

Rise Time

Turn-Off Delay Time

Fall Time

VDS=300V, ID=1.1A,

RG=25Ω

7

24 ns

21 52 ns

13 36 ns

27 64 ns

CISS

Input Capacitance

COSS

Output Capacitance

Over-Temperature-Protection Section

TOTP

Threshold Temperature for OTP

Notes:

3. Pulse Test: pulse width ≦ 300μs; duty cycle ≦ 2%.

4. Essentially independent of operating temperature.

VGS=0V, VDS=25V

fS=1MHz

130 170 pF

19 25 pF

140

°C

© 2009 Fairchild Semiconductor Corporation

FSEZ1016A • Rev. 1.0.2

6

www.fairchildsemi.com

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