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FMMT413
(Rev.:2015)

NPN AVALANCHE TRANSISTOR IN SOT23

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 8)

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Static Forward Current Transfer Ratio (Note 8)

Collector-Emitter Saturation Voltage (Note 8)

Base-Emitter Saturation Voltage (Note 8)

Pulsed Current in Second Breakdown (Note 9)

Collector-Emitter Inductance

Symbol

Min

Typ

BVCBO

150

—

BVCES

150

—

BVCEO

50

—

BVEBO

6

—

ICBO

—

—

IEBO

—

—

hFE

50

—

VCE(sat)

—

—

VBE(sat)

—

—

IUSB

—

—

22

30

Lce

—

2.5

Output Capacitance

Cobo

—

2

Transition Frequency

fT

—

150

Notes:

8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

9. Measured with a circuit possessing an approximate loop inductance of 12nH.

FMMT413

Max

—

—

—

—

100

100

—

150

800

—

—

—

—

—

Unit

V

V

V

V

nA

nA

—

mV

mV

A

A

nH

pF

MHz

Test Condition

IC = 100µA

IC = 100µA

IC = 10mA

IE = 100µA

VCB = 120V

VEB = 4V

IC = 10mA, VCE = 10V

IC = 10mA, IB = 1mA

IC = 10mA, IB = 1mA

VC = 110V, CCE = 4.7nF

VC = 130V, CCE = 4.7nF

Standard SOT23 leads

VCB = 10V, IE = 0

f = 1MHz

VCE = 5V, IC = 10mA,

f = 20MHz

FMMT413

Datasheet Number: DS33083 Rev.5 - 2

4 of 6

www.diodes.com

November 2015

© Diodes Incorporated

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