FEP16FT(1995) Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.

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componentes Descripción

Fabricante

FEP16FT
(Rev.:1995)

16.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

FEP16BT thru FEP16JT

Pb Free Plating Product

FEP16BT/FEP16DT/FEP16FT/FEP16GT/FEP16HT/FEP16JT

Pb

16.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AB open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.2 gram approximately

TO-220AB/TO-220-3L

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Case

Case

Case

Positive

Negative

Common Cathode Common Anode

Suffix "T"

Suffix "TA"

Doubler

Tandem Polarity

Suffix "TD"

Series

Tandem Polarity

Suffix "TS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL FEP16BT

FEP16DT

Maximum Recurrent Peak Reverse Voltage VRRM

200

Maximum RMS Voltage

VRMS

140

Maximum DC Blocking Voltage

VDC

200

Maximum Average Forward Rectified

Current TC=100℃(Total Device 2x8A=16A)

IF(AV)

FEP16FT

FEP16GT

400

280

400

16.0

FEP16HT UNIT

FEP16JT

600

V

420

V

600

V

A

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

175

(JEDEC method)

150

A

Maximum Instantaneous Forward Voltage

VF

0.98

1.3

@ 8.0 A (Per Diode/Per Leg)

1.7

V

Maximum DC Reverse Current @TJ=25 ℃

IR

At Rated DC Blocking Voltage @TJ=125℃

Maximum Reverse Recovery Time (Note 1) Trr

Typical junction Capacitance (Note 2)

CJ

Typical Thermal Resistance (Note 3)

R JC

Operating Junction and Storage

Temperature Range

TJ, TSTG

5.0

100

35

90

2.0

-55 to + 150

μA

μA

nS

pF

℃/W

℃

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Rev.09T

© 1995 Thinki Semiconductor Co., Ltd.

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http://www.thinkisemi.com.tw/

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