FDB2670 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

FDB2670

200V N-Channel PowerTrench MOSFET

TY Semiconductor 

SMD Type

Product specification

KDB2670(FDB2670)

Electrical Characteristics Ta = 25

Parameter

Drain to source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Symbol

VDSS

IDSS

IGSS

VGS(th)

Testconditons

ID=250ìA VGS=0V

VDS=160V,VGS=0

VGS= 20V

VDS = VGS, ID = 250ìA

Drain to source on-state resistance

RDS(on)

VGS=10V,ID=10A

VGS=10V,ID=10A,TJ=125

On–State Drain Current

ID(on)

VGS = 10 V, VDS = 10 V

Forward Transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Maximum Continuous Drain-Source

Diode Forward Current

Source to Drain Diode Voltage

gFS

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(ON)

tr

td(OFF)

tf

IS

VSD

VDS = 10 V, ID = 10 A

VDS=100V,VGS=0,f=1MHZ

VDS = 100 V, ID = 10 A,VGS = 10 V*

VDD = 100V, ID = 1 A,

VGS = 10 V, RGEN = 6 *

VGS = 0 V, IS = 11 A *

* Pulse Test: Pulse Width 300ìs, Duty Cycle 2.0%

Min Typ Max Unit

200

V

1

A

100 nA

2.0 4 4.5 V

98 130

mÙ

205 285

20

A

24

S

1320

pF

71

pF

24

pF

27 38 nC

7

nC

10

nC

14 25 ns

5 10 ns

26 41 ns

23 37 ns

19 A

0.83 1.3 V

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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