EFA040A-100P Ver la hoja de datos (PDF) - Excelics Semiconductor, Inc.
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EFA040A-100P Datasheet PDF : 2 Pages
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UPDATED 11/17/2006
EFA040A-100P
Low Distortion GaAs Power FET
• NON-HERMETIC 100MIL METAL FLANGE PACKAGE
• +23.0dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
G
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES HIGH POWER
EFFICIENCY, LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
Output Power at 1dB Compression
VDS = 8V, IDS ≈ 50% IDSS
f= 12GHz
f= 18GHz
G1dB
Gain at 1dB Compression
VDS = 8V, IDS ≈ 50% IDSS
f= 12GHz
f= 18GHz
PAE
Power Added Efficiency at 1dB Compression
VDS = 8V, IDS ≈ 50% IDSS
f=12GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
GM
Transconductance
VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage
VDS = 3 V, IDS = 1.0 mA
BVGD
Drain Breakdown Voltage
IGD = 1.0mA
BVGS
Source Breakdown Voltage
IGS = 1.0mA
RTH
Thermal Resistance (Au-Sn Eutectic Attach)
Note: * Overall Rth depends on case mounting.
MIN
21.0
7.5
60
45
-13
-7
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Igf
Forward Gate Current
12V
-5V
1.8 mA
Igr
Reverse Gate Current
0.3 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
20 dBm
175oC
-65/175oC
Pt
Total Power Dissipation
1.2 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
D
TYP
23.0
23.0
9.0
6.5
35
105
60
-2.0
-15
-14
115*
MAX
160
-3.5
UNIT
dBm
dB
%
mA
mS
V
V
V
ºC/W
CONTINUOUS2
8V
-4V
0.6 mA
0.1 mA
@ 3dB Compression
175oC
-65/175oC
1.2 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006
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