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Número de pieza

componentes Descripción

Fabricante

EB201

High Cell Density MOSFETs

ON Semiconductor 

STANDARD

TMOS

CELL

DENSITY

EB201/D

HDTMOS

CELL

DENSITY

Figure 2. HDTMOS versus Standard TMOSE Cell Densities

Also a key factor in lowering on–resistance is the use of

low resistivity substrates. The substrate of the power

MOSFET can be thought of as the mechanical base onto

which the transistors are built. Although it comprises almost

all of the wafer thickness, its only purpose is to strengthen

the wafer for its trip through wafer processing, dicing, and

final assembly. The resistance added by the substrate is

entirely undesirable, and low resistivity substrates are a must

for ultra–low on–resistance MOSFETs. Figure 3 compares

the major on–resistance components of HDTMOS to those

of standard cell MOSFETs.

The on–resistance area product is a good figure of merit

for the power MOSFET, and lower is better for this

parameter. The original 28 mΩ, 60 V MOSFET had an

on–resistance area product of about 7.0 mΩ–cm2 (based on

the maximum on–resistance rating at 25°C). Die size

reductions over the last several years have shaved the

product to about 5.5 mΩ–cm2. The newest device, the

MTP75N05HD, is more than a refinement of typical power

MOSFET technology. Its 2.4 mΩ–cm2 product was

attained by completely redesigning the device and

developing an entirely new manufacturing process.

5

ÉÉÉÉÉÉHDTMOS

4

STD TMOS

3

2

1

0

ÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈÈÈÈ ÉÉÉÉ

SPREAD

SUB

JFET

WIRE

CHAN

METAL

ACCUM

Figure 3. On–Resistance Components

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2

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