DTC143ZCA Ver la hoja de datos (PDF) - Willas Electronic Corp.
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DTC143ZCA Datasheet PDF : 2 Pages
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WILLAS
FM120-M+
DTC143ZCA THRU
1.0NAPSUNRFDACigE iMtOaUl NTTrSaCnHsOTisTKtYoBrARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Typical CharacterisPtaiccskage outline
• Batch processOdNesCihganr,aectxecreisltleicnst power dissipation offers
OFF Characteristics
100 better reverse leakage current and thermal resistance.
10
• Low profile surface mounted application inVoO=r0d.3er to
SOD-123H
optimize board space.
3
30 • Low power loss, high efficiency.
• High current capability, low forward voltage drop.
1
0.146(3.7)
0.130(3.3)
10 • High surge capability.
• Guardring for overvoltage protection.
0.3
• Ultra high-speed switching.
3 • Silicon epitaxial planar chip, metal silicon junction.
0.1
Ta=100℃
Ta=25℃
• Lead-free parts meet environmental standards of
1
MIL-STD-19500 /228 Ta=25℃
• RoHS product for packing code suffix "G"
0.03
Halogen free product for packing coTda=e10s0u℃ffix "H"
0.01
0.3 Mechanical data
3E-3
• Epoxy : UL94-V0 rated flame retardant
VCC=5V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.1 • Case : Molded plastic, SOD-123H
0.1
0.3
1
3
10
30
100
,
• Terminals :OPUlaTPteUTd CteURrmREinNTalsI,O so(mldAe) rable per MIL-STD-750
Method 2026
1E-3
0.2
0.031(00..84) Typ.
0.6
0.8
INPUT VOLTAGE VI(OFF) (V)
0.0311(0.0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting PositiGoIn :—A—ny IO
1000
1000
• Weight : Approximated 0.011 gram
VO=5V
Dimensions in inches and (millimeters)
VO(ON) —— IO
IO/II=20
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient Ttae=m10p0℃erature unless otherwise specified.
300
Sing10l0e phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate cuTrar=e2n5℃t by 20%
30
Marking Code
RATINGS
Maximum Recurrent Peak Reverse Voltage
10
Maximum RMS Voltage
Maximum DC Blocking Voltage
3
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM131000-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
Ta=16000℃
80
100
150
200
VRMS
14
21
28
35
VDC
20
3030
40
50
42
Ta=2556℃
70
60
80
100
105
140
150
200
IO
1.0
Peak F1orward Surge Current 8.3 ms single half sine-wave
0.1
superimposed
on0.r3ated
load
1
(JEDEC
m3ethod)
10
30
IFSM
100
OUTPUT CURRENT
Typical Thermal Resistance (Note 2)
IO
(mA)
RΘJA
10
0.1
0.3
1
3 30
10
30
100
OUTPUT CURRENT
40
IO
(mA)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Stora1g0e Temperature Range CO —— VR
CHARACTERISTICS
CJ
120
TJ
TSTG
-55 to +125
400
PD- 6—5 —to +1T7a5
-55 to +150
f=1MHz
SYTMa=B25O℃L FM120-MH FM13305-0MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maxim8um Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
6
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
300
0.5
10
250
DTC143ZCA
200
2- Ther4mal Resistance From Junction to Ambient
150
100
2
50
0
0
4
8
12
16
20
2012-06
REVERSE BIAS VOLTAGE VR (V)
2012-0
0
0
25
50
75
100
125
150
AMBIENT WILLAS TEMPERATURE Ta (℃)ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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