DTC113ZUA Ver la hoja de datos (PDF) - Willas Electronic Corp.
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DTC113ZUA Datasheet PDF : 2 Pages
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WILLAS
FM120-M
DTC113ZUA THRU
1.0NAPSUNRFDACigE MitOaUlNTTrSaCnHOsTiTsKtYoBrARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Typical CharacterisPtaiccksage outline
• Batch procesOsNdCehsaigranc, teexricsetilclesnt power dissipation offers
5000
better reverse leakage current and thermal resistance. 100
V•O=L0o.3wV profile surface mounted application in order to
V =5V
CC
OFF Characteristics
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
10
T =100℃
a
25℃
0.146(3.7)
0.130(3.3)
• High surge capTa=b2i5li℃ty.
a
1000 • Guardring for ove1r0v0o℃ltage protection.
• Ultra high-speed switching.
1
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.1
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
100
0.1
• Case : Molde1d plastic, SOD-11023H
0.01
100
0
•
TerminalsO:UPTlPaUteTdCUteRrRmENinT alIsO ,
s(moAld) erable
per
,
MIL-STD-750
0.031(0.8)5T00yp.
1000
INPUT VOLTAGE V
(mV)
I(OFF)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.1053010(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
V
—— I
1000 • Mounting PositiOo(OnN): Any
O
1000
• Weight : Approximated 0.011 gram
I /I =20
OI
Dimensions in inches and (millimeters)
G —— I
I
O
V =5V
O
MAXIMUM RATINGS AND ELECTRICAL CH3A00RACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
T =100℃
a
25℃
Single phase half wTaa=v1e00, ℃60Hz, resistive of inductive load.
100
For capacitive load, de2r5a℃te current by 20%
100
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL FM120-MH FM13030-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
13
14
15
16
VRRM
20
1300
40
50
60
18
10
115 120
80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
20
30
40
50
60
3
80
100
150
200
IO
1.0
Pea10k3Forward Surge Curre10nt 8.3 ms single half sine-wave
superimposed on ratedOlUoTaPdU(JTECDUERCREmNeTthoI d) (mA)
O
Typical Thermal Resistance (Note 2)
IFSM100
RΘJA
1
0.1
0.3
1
3 30 10
30
100
OUTPUT CURRENT I (mA)
O
40
Typical Junction Capacitance (Note 1)
Operating Temperature RaCnge —— V
Stor6age Temperature RangeO
R
CHARACTERISTICS
CJ
120
TJ
TSTG
-55 to +125
400
P —— T
D - 65 to +a175
-55 to +150
f=1MHz
T =25℃
a
SYMBOL FM120-MH FM315030-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @T A=25℃
IR
Rat4ed DC Blocking Voltage
@T A=125℃
0.50
300
250
0.70
0.85
0.5
10
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2
DTC113ZUA
200
150
100
50
0
0
4
8
12
16
20
2012-06 REVERSE BIAS VOLTAGE V (V)
R
2012-0
0
0
25
50
75
100
125
150
AMBIENT
WILLAS TEMPERATURE T (℃)
a
ELECTRONIC
COR
WILLAS ELECTRONIC CORP.
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