DTA123EE Ver la hoja de datos (PDF) - Weitron Technology

Número de pieza

componentes Descripción

Fabricante

DTA123EE

Bias Resistor Transistor PNP Silicon

Weitron Technology 

DTA114EE Series

WEITRON

Electrical Characteristics (TA=25˚C Unless Otherwise noted)

Characteristics

Symbol Min Typ Max Unit

Off Characteristics

Collector-Emitter Breakdown Voltage(2)

IC=2.0mA, IB=0

Collector-Base Breakdown Voltage

IC=10µA, IE=0

Collector-Base Cutoff Voltage

VCB=50V, IE=0

Collector-Emitter Cutoff Current

VCE=50V, IB=0

Emitter-Base Cutoff Current

VEB=6.0V, IC=0

V(BR)CEO

50

V(BR)CBO

50

ICBO

-

ICEO

-

DTA114EE

-

DTA124EE

-

DTA144EE

-

DTA114YE

-

DTA114TE

-

DTA143TE

-

DTA123EE

IEBO

-

DTA143EE

-

DTA143ZE

-

DTA124XE

-

DTA123JE

-

DTA115EE

-

DTA144WE

-

2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%

-

-

V

-

-

V

-

100

nA

-

500

nA

-

0.5

-

0.2

-

0.1

-

0.2

-

0.9

-

1.9

-

2.3

mA

-

1.5

-

0.18

-

0.13

-

0.2

-

0.05

-

0.13

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12-Jun-06

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