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DTA143T

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTA143T

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-100

mA

SOT-523

150

mW

Collector Power Dissipation

SOT-23/SOT-323

PC

200

mW

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC Current Gain

Input resistance

Transition frequency

* Transition frequency of the device

SYMBOL

TEST CONDITIONS

BVCBO IC=-50μA

BVCEO IC=-1mA

BVEBO IE=-50μA

ICBO VCB=-50V

IEBO VEB=-4V

VCE(SAT) IC=-5mA, IB= -0.25mA

hFE VCE=-5V, IC= -1mA

R1

fT VCE=-10V, IE=5mA, f=100MHz *

MIN TYP MAX UNIT

-50

V

-50

V

-5

V

-0.5 μA

-0.5 μA

-0.3 V

100 250 600

3.29 4.7 6.11 kΩ

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-058,D

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