DTA143TL(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

DTA143TL
(Rev.:2011)

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTA143T

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-100

mA

Collector Power Dissipation

Junction Temperature

Storage Temperature

SOT-23/SOT-323

SOT-523

PC

TJ

TSTG

200

mW

150

mW

+150

℃

-40~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-base breakdown voltage

BVCBO IC=-50μA

Collector-emitter breakdown voltage BVCEO IC=-1mA

Emitter-base breakdown voltage

Collector cutoff current

BVEBO IE=-50μA

ICBO VCB=-50V

Emitter cutoff current

Collector-emitter saturation voltage

IEBO VEB=-4V

VCE(SAT) IC=-5mA, IB= -0.25mA

DC Current Gain

Input resistance

hFE VCE=-5V, IC= -1mA

R1

Transition frequency

fT

Note: Transition frequency of the device

VCE=-10V, IE=5mA, f=100MHz (Note)

MIN TYP MAX UNIT

-50

V

-50

V

-5

V

-0.5 μA

-0.5 μA

-0.3 V

100 250 600

3.29 4.7 6.11 kΩ

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-058,E

Share Link: