DTA123EE(2012) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
DTA123EE
(Rev.:2012)
(Rev.:2012)
ROHM Semiconductor
DTA123EE Datasheet PDF : 9 Pages
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DTA123E series
Absolute maximum ratings (Ta = 25C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
DTA123EM
DTA123EE
DTA123EUA
DTA123EKA
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.) *1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
50
V
12 to 10
V
100
mA
100
mA
150
mW
200
mW
150
C
55 to 150
C
Electrical characteristics(Ta = 25C)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
Input current
VO(on)
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = 5V, IO = 100μA
VO = 0.3V, IO =10mA
IO / II = 10mA / 0.5mA
VI = -5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
3
-
-
-
20
1.54
0.8
-
Typ.
-
-
0.1
-
-
-
2.2
1
250
Max.
0.5
-
0.3
3.8
0.5
-
2.86
1.2
-
Unit
V
V
mA
A
-
k
-
MHz
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