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DG401 Ver la hoja de datos (PDF) - Temic Semiconductors

Número de pieza
componentes Descripción
Fabricante
DG401 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Ordering Information
DG401/403/405
Temp Range
DG401
–40 to 85_C
–55 to 125_C
DG403
–40 to 85_C
–55 to 125_C
DG405
–40 to 85_C
–55 to 125_C
Package
Part Number
16-Pin Plastic DIP
16-Pin CerDIP
LCC-20
DG401DJ
DG401AK
DG401AK/883
DG401AZ/883
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin CerDIP
LCC-20
DG403DJ
DG403DY
DG403AK
DG403AK/883
5962-8976301M2A
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin CerDIP
LCC-20
DG405DJ
DG405DY
DG405AK/883
5962-89961012A
Absolute Maximum Ratings
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND – 0.3 V) to (V+) +0.3 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . (V–) –2 V to (V+ plus 2 V)
or 30 mA, whichever occurs first
Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms 10% duty) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK, AZ Suffix) . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
16-Pin SOICe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
LCC-20f . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by
internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 12 mW/_C above 75_C
e. Derate 7.6 mW/_C above 75_C
f. Derate 13 mW/_C above 75_C
Siliconix
3
S-53748—Rev. E, 05-Jun-97

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