DF08S Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

DF08S

Bridge Rectifiers

TY Semiconductor 

■ Features

● Glass passivated chip junctions

● Low Forward Voltage Drop, High Current Capability

● Surge Overload Rating to 50A Peak

Product specification

DF005S - DF10S

DF-S

0.047 (1.20)

0.040 (1.02)

0.205 (5.2)

0.195 (5.0)

0.335 (8.51)

0.320 (8.13)

45o

0.130 (3.3) 0.013 (0.330)

0.120 (3.05) 0.009 (0.241)

0.404 (10.3)

0.386 (9.80)

0.255 (6.5)

0.245 (6.2)

0.060 (1.524)

0.040 (1.016)

0.013 (0.330)

0.003 (0.076)

Dimensions in inches and (millimeters)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol DF005S DF01S DF02S DF04S DF06S DF08S DF10S Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRMM

VRWM

VDC

50 100 200 400 600 800 1000 V

RMS Reverse Voltage

VRMS

35

70 140 280 420 560 700 V

Average Forward Rectified Current TA=@ 40℃

IO

1.0

A

Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single half-sine-wave Superimposed on Rated Load

IFSM

(JEDECmethod)

50

A

Forward Voltage (per element) @ IF = 1.0A

VF

1.1

V

Reverse Current(per element) @ Rated VR , TA = 25℃

IR

TA = 125℃

Rating for fusing (t < 8.3ms)

I2t

10

μA

500

10

A2s

Typical Total Capacitance (per element) (Note 1)

CJ

25

pF

Typical Thermal Resistance, Junction to Ambient (Note 2) RθJA

40

℃/W

Operating and Storage Temperature Range

Tj, Tstg

-55 to +150

℃

Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.

2.Device mounted on PCB with 0.5 × 0.5” (13 × 13mm).

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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