DB3 Ver la hoja de datos (PDF) - HY ELECTRONIC CORP.

Número de pieza

componentes Descripción

Fabricante

DB3

SILICON BIDIRECTIONAL DIACS (POWER DISSIPATION 150 mW)

HY ELECTRONIC CORP. 

RATING AND CHARACTERISTIC CURVES

DB3,DB4,DB6

FIG.1-CURRENT-VOLTAGE CHARACTERISTICS

+IF

10mA

IB

IB

-V

0.5VBO

+V

△V

VBO

FIG.2-TEST CIRCUIT FOR OUTPUT VOLATGE

220V

60HZ

10KΩ

500KΩ

D.U.T

VO

R=20Ω

0.1uF

-IF

FIG.3-TEST CIRCUIT SEE FIG.2 ADJUST R

FOR Ip=0.5A

90%

IP

10%

tr

FIG.5-RELATIVE VARIATION OF VBO VERSUS

JUNCTION TEMPERATURE(TYPICAL VALUES)

VBO(IJ)

VBO(TJ=25℃）

1.08

1.06

1.04

TJ = (°C)

1.02

1.00

25

50

75

100

125

P(mW )

FIG.4-TEST CIRCUIT FOR OUTPUT

VOLATGE

160

140

120

100

80

60

40

Tamb(°C)

20

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

FIG.6-PEAK PULSE CURRENT VERSUS PULSE

DURATION (MAXIMUM VALUES)

ITRM(A)

2

1

f = 100Hz

Tjinitial=25°C

0.1

tp(us)

0.01

10

100

1000

10000

~ 212 ~

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