D44T2 Ver la hoja de datos (PDF) - Inchange Semiconductor
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D44T2 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44T1/2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
ICES
Collector Cutoff Current
VCE= 300V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
D44T1
D44T2
IC= 0.5A ; VCE= 10V
hFE-2
DC Current Gain
D44T1
D44T2
IC= 50mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V; ftest= 1MHz
MIN TYP. MAX UNIT
1.0
V
1.2
V
10 μA
10 μA
30
90
75
175
20
40
15
MHz
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 0.5A; IB1= -IB2= 50mA
0.3 μs
3.0 μs
0.7 μs
isc Website：www.iscsemi.cn
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