D44T2 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
D44T2 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44T1/2
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage
VBE=0
300
VCEO
Collector-Emitter Voltage
250
UNIT
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
0.5
A
31.2
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4 ℃/W
isc Website：www.iscsemi.cn
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