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CS51221 Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante
CS51221
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CS51221 Datasheet PDF : 14 Pages
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CS51221
ELECTRICAL CHARACTERISTICS (−40°C < TA < 85°C; −40°C < TJ < 125°C; 3.0 V < VC < 15 V; 4.7 V < VCC < 15 V;
RT = 12 k; CT = 390 pF; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Gate Driver
High Saturation Voltage
Low Saturation Voltage
High Voltage Clamp
VC − GATE, VC = 10 V, ISOURCE = 200 mA
GATE − PGND, ISINK = 200 mA
1.5
2.0
V
1.2
1.5
V
11
13.5
16
V
Output Current
1.0 nF Load. Note 3
1.0
1.25
A
Output UVL Leakage
GATE = 0 V
1.0
50
mA
Rise Time
1.0 nF Load, VC = 20 V, 1.0 V < GATE < 9.0 V
60
Fall Time
1.0 nF Load, VC = 20 V, 9.0 V < GATE < 1.0 V
25
Max Gate Voltage During UVL/Sleep IGATE = 500 mA
0.4
0.7
100
ns
50
ns
1.0
V
Feed Forward (FF)
Discharge Voltage
Discharge Current
FF to GATE Delay
IFF = 2.0 mA
FF = 1.0 V
0.3
0.7
V
2.0
16
30
mA
50
75
125
ns
Overcurrent Protection
Overcurrent Threshold
ISENSE to GATE Delay
External Voltage Monitors
ISET = 0.5 V, Ramp ISENSE
0.475
0.5
50
90
0.525
V
125
ns
Overvoltage Threshold
Overvoltage Hysteresis Current
Undervoltage Threshold
OV Increasing
OV = 2.15 V
UV Increasing
1.9
2.0
2.1
V
10
12.5
15
mA
0.95
1.0
1.05
V
Undervoltage Hysteresis
25
75
125
mV
Soft−Start (SS)
Charge Current
Discharge Current
Charge Voltage
SS = 2.0 V
SS = 2.0 V
40
50
4.0
5.0
2.8
3.0
70
mA
7.0
mA
3.4
V
Discharge Voltage
Soft−Start Clamp Offset
FF = 1.25 V
0.25
0.3
0.35
V
1.15
1.25
1.35
V
Soft−Start Fault Voltage
OV = 2.15 V or LV = 0.85 V
0.1
0.2
V
Blanking
Blanking Time
SS Blanking Disable Threshold
COMP Blanking Disable Threshold
VFB < 1.0
VFB < 1.0, SS > 3.0 V
Thermal Shutdown
Thermal Shutdown
Note 3
Thermal Hysteresis
Note 3
3. Guaranteed by design, not 100% tested in production.
50
150
250
ns
2.8
3.0
3.3
V
2.8
3.0
3.3
V
125
150
180
°C
5.0
10
15
°C
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