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CR8PM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=25A, instantaneous value
VGT
Gate trigger voltage
Ta=25°C, VD=6V, IT=1A
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=1A
IH
Rth (j-c)
Holding current
Thermal resistance
Tj=25°C, VD=12V
Junction to case V1
V1. The contact thermal resistance Rth (j-c) is 0.5°C/W with greased.
Limits
Min. Typ. Max.
—
—
2.0
—
—
2.0
—
—
1.4
—
—
1.0
0.2
—
—
—
—
15
—
1.5
—
—
—
3.7
Unit
mA
mA
V
V
V
mA
mA
°C/ W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
103
7 Tc = 125°C
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0
1
2
3
4
5
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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