CNY17-4 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
CNY17-4 Datasheet PDF : 8 Pages
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CNY17-2,CNY17-3,CNY17-4
Electrical Characteristics (Ta = 25℃)
Characteristic
Forward voltage
Reverse current
Capacitance
DC forward current
gain
Collector-emitter
breakdown voltage
Collector-base breakdown
voltage
Emitter-collector
breakdown voltage
Collector dark current
Collector dark current
Collector-emitter
capacitance
Current
transfer
ratio
CNY17-2
CNY17-3
CNY17-4
Saturation voltage
Capacitance input to
output
Isolation resistance
DC isolation voltage
Rise fall time
Rise / fall time photo
diode
Symbol
VF
IR
CD
hFE
Test Condition
IF = 60 mA
VR = 3 V
V = 0, f = 1 MHz
VCE = 5, IC = 500 µA
V (BR) CEO IC = 1 mA, IF = 0
V (BR) CBO IC = 100 µA, IF = 0
V (BR) ECO IE = 100 µA, IF = 0
ICEO
ICBO
VCE = 10 V, IF = 0
VCB = 10 V, IF = 0
CCE
V = 0, f = 1 MHz
CTR
IF = 10 mA, VCE = 5 V
VCE (sat)
CS
RS
BVS
tr / tf
tr / tf
IF = 10 mA, IC = 2.5 mA
V = 0, f = 1 MHz
V = 500 V
DC 1 minute
VCE = 10 V, IC = 2 mA
RL = 100 Ω
VCB = 10 V, ICB = 50 µA
RL = 100Ω
Min. Typ. Max. Unit
―
1.35 1.65
V
―
―
10
µA
―
30
―
pF
100 200
―
70
―
―
V
70
―
―
V
7
―
―
V
―
1
50
nA
―
0.1
20
nA
―
10
―
pF
63
―
125
100
―
200
%
160
―
320
―
―
0.4
V
―
0.8
―
pF
―
1011
―
Ω
4400 ―
―
V
―
5
10
µs
―
200
―
ns
3
2002-09-25
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