Q62702-L94 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
Q62702-L94 Datasheet PDF : 7 Pages
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GaAs FET
CLY 10
_________________________________________________________________________________________________________
Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics
Symbol min
typ
max Unit
Drain-source saturation current
IDSS
1.2
1.6
2.4
A
VDS = 3 V VGS = 0 V
Drain-source pinch-off current
ID
-
-
200
µA
VDS = 3 V VGS = -3.8 V
Gate pinch-off current
IG
-
10
35
µA
VDS = 3 V VGS = -3.8 V
Pinch-off Voltage
VGS(p) -3.8
-2.8
-1.8
V
VDS= 3 V ID=200µA
Small Signal Gain *)
G
dB
VDS = 3 V ID = 700 mA f = 1.8 GHz
-
9
-
Pin = 0 dBm
Small Signal Gain **)
G
dB
VDS = 3 V ID = 700 mA f = 1.8 GHz
-
8
-
Pin = 0 dBm
Output Power
Po
28
28.5
-
dBm
VDS = 3 V ID = 700 mA f = 1.8 GHz
Pin = 20.5 dBm
Output Power
Po
32.0 32.5
-
dBm
VDS = 5 V ID = 700 mA f = 0.9 GHz
Pin = 20 dBm
1dB-Compression Point
P1dB
-
28.5
-
dBm
VDS = 3 V ID = 700 mA f = 1.8 GHz
1dB-Compression Point
P1dB
-
32.5
-
dBm
VDS = 5 V ID = 700 mA f = 1.8GHz
Power Added Efficiency
PAE
40
55
-
%
VDS = 5 V ID = 700 mA f = 1.8 GHz
Pin = 20 dBm
*) Matching conditions for maximum small signal gain: f = 1.8 GHz
Source Match: Γms: MAG = 0.70, ANG -116°; Load Match: Γml: ;MAG 0.68, ANG -145°
**) Power matching conditions: f = 1.8 GHz
Source Match: Γms: MAG = 0.70, ANG -120°; Load Match: Γml: ;MAG 0.78, ANG -130°
Siemens Aktiengesellschaft
pg. 2/7
17.12.96
HL EH PD 21
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