AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics
Symbol min
Drain-source saturation current
VDS = 2 V VGS = 0 V
IDSS
15
Pinch-off voltage
VDS = 2 V ID = 1 mA
VGS(P) -2
Gate leakage current
VDS = 2 V ID = 15 mA
IG
-
Transconductance
VDS = 2 V ID = 15 mA
gm
50
Noise figure
F
VDS = 2 V ID = 15 mA f = 12 GHz
CFY77-08
-
CFY77-10
-
Associated gain
Ga
VDS = 2 V ID = 15 mA f = 12 GHz
CFY77-08
10
CFY77-10
9.5
typ
30
-0.7
0.05
65
0.7
0.9
10.5
10
max
60
-0.2
2
-
0.8
1
-
-
Unit
mA
V
µA
mS
dB
dB
Siemens Aktiengesellschaft
pg. 2/4
11.01.1996
HL EH PD 21