CFH2162-P1 Ver la hoja de datos (PDF) - Mimix Broadband
Número de pieza
componentes Descripción
Fabricante
CFH2162-P1 Datasheet PDF : 2 Pages
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0.8-1.0 GHz
+36 dBm Power GaAs FET
October 2009 - Rev 20-Oct-09
Features
High Gain
+36 dBm Power Output
Proprietary Power FET Process
>45% Linear Power Added Efficiency
+33 dBm with 30 dBc Third Order Products
Package Diagram
CFH2162-P1
Description
The CFH2162-P1 is a high-gain, linear FET intended for driver
amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels
up to +36 dBm. The device is easily matched and provides
excellent linearity at 4 Watts. Manufactured in Mimix’s power
FET process, this device is assembled in a power flange
package.
Specifications (TA = 25 ºC)
The following specifications are guaranteed at room
temperature in Mimix test fixture at 850 MHz.
Absolute Maximum Ratings
Drain-Source Voltage (Vds)
15V(3)
Gate-Source Voltage (Vgs)
-5V
Drain Current (Ids)
Idss
Continuous Dissipation (Pt)
10W
Channel Temperature (Tch)
175 ºC
Storage Temperature (Tstg)
-65 ºC to +175 ºC
Notes:
1. Sum to two tones with 1 MHz spacing = 33 dBm.
2. See thermal considerations information.
3. Maximum potential difference across the device (Vd + Vg) cannot
exceed 18V.
Applications
ISM Band Base Stations
Cellular Base Stations
Wireless Local Loop
Power Flange Package
Physical Dimensions
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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