BYV4100 Ver la hoja de datos (PDF) - Philips Electronics
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BYV4100 Datasheet PDF : 8 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifier
Product specification
BYV4100
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
V(BR)R
IR
reverse avalanche
breakdown voltage
reverse current
trr
reverse recovery time
Cd
diode capacitance
-d-d--I--tR--
maximum slope of reverse
recovery current
CONDITIONS
IF = 3.5 A; Tj = Tj max; see Fig.5
IF = 3.5 A; see Fig.5
IR = 0.1 mA
MIN.
−
−
120
VR = VRRMmax;
−
see Fig.8
VR = VRRMmax; Tj = 165 °C;
−
see Fig.8
when switched from IF = 0.5 A
−
to IR = 1 A; measured at
IR = 0.25 A; see Fig.10
f = 1 MHz; VR = 0 V; see Fig.9
−
when switched from IF = 1 A to
−
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.11
TYP.
−
−
−
−
−
−
MAX.
0.78
0.98
−
UNIT
V
V
V
5 µA
150 µA
15 ns
245
− pF
−
2 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
K/W
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12.
For more information please refer to the “General Part of associated Handbook”.
1996 Oct 07
3
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