BYW77G-200 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

BYW77G-200

HIGH EFFICIENCY FAST RECOVERY DIODES

STMicroelectronics 

BYW77G-200

Fig.7 : Junction capacitance versus reverse volt-

age applied (Typical values).

C(pF)

200

190

180

170

160

150

140

130

120

110

100

1

F=1MHz Tj=25 oC

VR(V)

10

100 200

Fig.9 : Peak reverse current versus dIF/dt.

Fig.8 : Reverse recovery charges versus dIF/dt.

QRR(nC)

80

90%CONFIDENCE

70 IF=IF(av)

60

Tj=100 OC

50

40

30

Tj=25 OC

20

10

dIF/dt(A/µs)

0

1

10

1 00

Fig.10 : Dynamic parameters versus junction tem-

perature.

IRM(A)

3.0

90%CONFIDENCE

2.5 IF=IF(av)

2.0

Tj=100 OC

1.5

1.0

0.5

0.0

1

20

Tj=25 OC

dIF/dt(A/µs)

10

1 00

Q R R; IRM [ Tj]/Q R R ;I R M[ Tj=1 25oC ]

1.50

1.25

1.00

0.75

0.50

IRM

QRR

0.25

0.00

0

Tj( oC)

25 50 75 100 125 150

4/5

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