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BYM10-1000 Ver la hoja de datos (PDF) - General Semiconductor

Número de pieza
componentes Descripción
Fabricante
BYM10-1000
GE
General Semiconductor GE
BYM10-1000 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES BYM10-50 THRU BYM10-600 / GL41A THRU GL41Y
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.0
GL41A THRU
GL41M
0.75
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
0.5
GL41T THRU
GL41Y
0.25
0
25 50 75 100 125 150 175
TERMINAL TEMPERATURE, °C
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
GL41A - M
20
15
10
5.0
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
1
GL41A-J
0.1
GL41K-Y
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
30
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
TJ=100°C
1
0.1
TJ=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
MOUNTED ON 0.20 x 0.27” (5 x 7mm)
COPPER PAD AREAS
10
1
1
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec

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