BUZ71 Ver la hoja de datos (PDF) - Comset Semiconductors
Número de pieza
componentes Descripción
Fabricante
BUZ71 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BUZ71
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage
Current
Drain-Source on Resistance
ID= 250 µA, VGS= 0 V
ID=1 mA, VGS= VDS
VDS= 50 V, VGS= 0 V
Tj= 25 °C
VDS= 50 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 9 A, VGS= 10 V
DYNAMIC CHARACTERISTICS
Min Typ Max Unit
50
-
-
V
2.1
3
4
V
-
-
1
µA
-
- 100
-
- 100 nA
- 0.08 0.1 Ω
Symbol
Ratings
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer
Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
REVERSE DIODE
Test Condition(s)
VDS = 2*ID*RDS(on)max
ID= 9 A
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 30 V, VGS= 10 V
ID= 3 A, RGS= 50 Ω
Min Typ Max Unit
4 7.7 -
S
- 450 600
- 220 350 pF
- 85 150
- 20 30
-
-
40
55
60
70
ns
- 40 55
Symbol
Ratings
Test Condition(s)
IS
Inverse Diode Continuous
Forward Current.
TC = 25°C
ISM
Inverse diode direct current,
pulsed.
TC = 25°C
VSD
Inverse Diode Forward
voltage
VGS = 0 V, IF = 28 A
Trr
Reverse Recovery Time
VDD = 30 V, IF = 14 A
Qrr
Reverse Recovery Charge di/dt = 100 A/µs
TC = 150°C
01/10/2012
COMSET SEMICONDUCTORS
Min Typ Max Unit
-
- 14
A
-
- 56
- 1.5 1.8 V
- 60 - ns
- 0.1 - µC
2/3
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