BUX98(2012) Ver la hoja de datos (PDF) - Comset Semiconductors

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BUX98
(Rev.:2012)

HIGH VOLTAGE FAST SWITCHING

Comset Semiconductors 

NPN BUX98

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

VCEO(SUS)

ICER

ICEO

ICES

IEBO

VCE(SAT)

VBE(SAT)

ton

ts

tf

Collector-Emitter Sustaining

Voltage (*)

IC =100 mA

VCE = VCES , RBE = 10Ω

Collector Cutoff Current

VCE = VCES , RBE = 10Ω

TCASE = 125°C

Collector Cutoff Current

VCE = VCEO , IB =0A

VCE = VCES , VBE = 0

Collector Cutoff Current

VCE = VCES , VBE = 0

TCASE = 125°C

Emitter Cutoff Current

VEB =5.0 V, IC=0

Collector-Emitter saturation

Voltage (*)

IC =12 A , IB =3 A

IC =16 A , IB =5 A

IC =20 A , IB =8 A

Base-Emitter saturation Voltage IC =12 A , IB =3 A

(*)

IC =20 A , IB =8 A

Turn-on time

Storage time

File time

RESISTIVE LOAD

IC=8 A , IB=1 A

VCC=150 V

IC=12 A , VCC=250 V

IB1 = -IB2 =3 A

Min Typ Max Unit

700 -

-

V

-

-

1

-

-

8 mA

-

-

2 mA

-

-

1

-

-

6 mA

-

-

2 mA

-

- 1.5

-

-

2

-

-

3

V

-

- 1.6

-

-

2

- 0.5 1

- 1.5 3 µs

- 0.2 0.8

(*) Pulse Duration = 300 µs, Duty Cycle ≤ 1.5%

26/10/2012

COMSET SEMICONDUCTORS

2/3

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