BUV48 Ver la hoja de datos (PDF) - Bourns, Inc

Número de pieza

componentes Descripción

Fabricante

BUV48

NPN SILICON POWER TRANSISTORS

Bourns, Inc 

BUV48, BUV48A

NPN SILICON POWER TRANSISTORS

● Rugged Triple-Diffused Planar Construction

● 15 A Continuous Collector Current

● 1000 Volt Blocking Capability

SOT-93 PACKAGE

(TOP VIEW)

B

1

C

2

E

3

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

BUV48

OBSOLETE Collector-emitter voltage (VBE = 0 V)

Collector-emitter voltage (RBE = 10 Ω)

Collector-emitter voltage (IB = 0)

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Peak base current

Non repetitive accidental peak surge current

Continuous device dissipation at (or below) 25°C case temperature

Operating junction temperature range

Storage temperature range

NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.

BUV48A

BUV48

BUV48A

BUV48

BUV48A

VCES

VCER

VCEO

IC

ICM

IB

IBM

ICSM

Ptot

Tj

Tstg

VALUE

850

1000

850

1000

400

450

15

30

4

20

55

125

-65 to +150

-65 to +150

UNIT

V

V

V

A

A

A

A

A

W

°C

°C

PRODUCT INFORMATION

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

1

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