BUR50 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc
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BUR50 Datasheet PDF : 3 Pages
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SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
BUR50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
V(BR)EBO
ICEO
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = 50mA
IE = 1.0mA
VCE = 125V
IB = 0
ICBO
Collector Cut-Off Current
VCB = 200V
IE = 0
TC = 125°C
IEBO
Emitter Cut-Off Current
VEB = 7V
IC = 0
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = 35A
IC = 70A
IB = 2A
IB = 7A
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = 35A
IC = 70A
IB = 2A
IB = 7A
hFE(1)
Forward-current transfer
ratio
IC = 5A
IC = 50A
VCE = 4V
VCE = 4V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
IC = 1.0A
f = 1.0MHz
IC = 70A
IB1 = 7A
IC = 70A
IB1 = -IB2 = 7A
VCE = 5V
VCC = 60V
VCC = 60V
Min. Typ Max. Units
125
V
10
1.0
0.2
mA
2
0.2
1.0
0.8
1.5
V
1.8
1.6
2
20
140
15
10
16
MHz
0.5
1.2
µs
0.82
2
0.1
0.5
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 6522
Website: http://www.semelab-tt.com
Issue 2
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