BUL45 Ver la hoja de datos (PDF) - Inchange Semiconductor
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BUL45 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH
VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2 A
VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4 A
VBEsat-1 Base-emitter saturation voltage
IC=1A ;IB=0.2 A
VBEsat-2 Base-emitter saturation voltage
IC=2A ;IB=0.4 A
ICEO
Collector cut-off current
ICES
Collector cut-off current
IEBO
Emitter cut-off current
VCE =RatedVCEO; IB=0;
VCE =RatedVCES; VEB=0;
TC=125℃
VEB=9V; IC=0
hFE-1
DC current gain
IC=0.3A;VCE=5V
hFE-2
DC current gain
IC=2A;VCE=1V
hFE-3
DC current gain
IC=10mA;VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5 A ; VCE=10V
Product Specification
BUL45
MIN TYP. MAX UNIT
400
V
0.175 0.25
V
0.25 0.4
V
0.84 1.2
V
0.89 1.25
V
100 μA
10
100
μA
0.1
mA
14
34
7
14
10
22
50
75
pF
12
MHz
2
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